Author: NISHIDA KEN FUNAKUBO HIROSHI YAMAMOTO TAKASHI KATODA TAKASHI
Publisher: Taylor & Francis Ltd
ISSN: 1058-4587
Source: Integrated Ferroelectrics, Vol.99, Iss.1, 2008-01, pp. : 23-30
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
By Matsuoka M. Nishide M. Tai T. Kim J. W. Shima H. Katoda T. Funakubo H. Nishida K. Yamamoto T.
Integrated Ferroelectrics, Vol. 157, Iss. 1, 2014-10 ,pp. :
Novel PZT Capacitor Technology for 32Mb and Beyond FRAM Device Using PbTiO3 Seeding Layer
By Lee K. M. Park K. S. Nam S. D. Lee S. W. Joo S. H. Seo J. S. Kim Y. D. Cho S. L. Son Y. H. An H. G. Kim H. J. Chung Y. J. Heo J. E. Lee M. S. Park S. O. Chung U. I. Moon J. T.
Integrated Ferroelectrics, Vol. 48, Iss. 1, 2002-01 ,pp. :