EXCITONS AND LIGHT INDUCED CREATION OF DEFECTS IN AMORPHOUS SILICON BASED FILMS

Author： OGIHARA C. YOSHIMURA T. TAKEMURA H. MORIGAKI K.

ISSN： 1058-7268

Source： Molecular Crystals and Liquid Crystals Science and Technology. Section B. Nonlinear Optics, Vol.29, Iss.10-12, 2002-12, pp. : 557-562

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Light-induced creation of metastable defects in hydrogenated amorphous silicon carbide

By Reitano R. Baeri A. Foti G.

Philosophical Magazine B, Vol. 81, Iss. 6, 2001-06 ,pp. : 629-636

Taylor & Francis Ltd

Access to resources Recommend Favorite

UV light induced defects in amorphous silicon thin films

By Pivac B. Pavlovic M. Kovacevic I. Etlinger B. Zulim I.

Vacuum, Vol. 71, Iss. 1, 2003-05 ,pp. : 135-139

Elsevier

Access to resources Recommend Favorite

Quantum efficiency of light-induced defect creation in hydrogenated amorphous silicon and amorphous As 2 Se 3

By K. Shimakawa Meherun-Nessa H. Ishida Ashtosh Ganjoo

Philosophical Magazine, Vol. 84, Iss. 1, 2004-01 ,pp. : 81-89

Taylor & Francis Ltd

Access to resources Recommend Favorite

Light-induced defect creation under pulsed subbandgap illumination in hydrogenated amorphous silicon

By Morigaki K.

Philosophical Magazine Letters, Vol. 83, Iss. 5, 2003-05 ,pp. : 341-349

Taylor & Francis Ltd

Access to resources Recommend Favorite

Experimental evidence of boron induced charged defects in amorphous silicon materials

By Caputo D. de Cesare G. Nascetti A. Palma F.

Thin Solid Films, Vol. 348, Iss. 1, 1999-07 ,pp. : 79-83

Elsevier

Access to resources Recommend Favorite