Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal

Author： Bezchastnov Victor G Korol Andrei V Solovyov Andrey V

ISSN： 0953-4075

Source： Journal of Physics B: Atomic, Molecular and Optical Physics, Vol.47, Iss.19, 2014-10, pp. : 195401-195406

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Modeling deflection of 450-GeV protons in a bent silicon crystal

By Koshcheev V. Safin N. Morgun D.

Technical Physics Letters, Vol. 33, Iss. 8, 2007-08 ,pp. : 658-660

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Simulation of positron energy spectra generated by channeling radiation of GeV electrons in a tungsten single crystal

Journal of Physics: Conference Series , Vol. 517, Iss. 1, 2014-05 ,pp. : 234-239

IOP Publishing

Access to resources Recommend Favorite

Measurements of the absolute energy spectra of cosmic-ray positrons and electrons above 7 GeV

Astronomy & Astrophysics, Vol. 392, Iss. 1, 2002-09 ,pp. : 287-294

Edp Sciences

Access to resources Recommend Favorite

Numerical modelling of a 10-cm-long multi-GeV laser wakefield accelerator driven by a self-guided petawatt pulse

New Journal of Physics, Vol. 12, Iss. 4, 2010-04 ,pp. : 1209-1231

IOP Publishing

Access to resources Recommend Favorite

Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

Journal of Physics: Conference Series , Vol. 635, Iss. 6, 2015-09 ,pp. : 5-5

IOP Publishing

Access to resources Recommend Favorite