Introduction of F₄-TCNQ/MoO₃ layers for thermoelectric devices based on pentacene

Author： Shuang-Hong Wu Nakamichi Ryosuke Taneda Masatsugu Qi-Sheng Zhang Adachi Chihaya

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.9, 2014-09, pp. : 98502-98505

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Improvement in the Lifetime of Planar Organic Photovoltaic Cells through the Introduction of MoO₃ into Their Cathode Buffer Layers

By Cattin Linda Morsli Mustapha Bernède Jean Christian

Electronics, Vol. 3, Iss. 1, 2014-03 ,pp. : 122-131

MDPI

Access to resources Recommend Favorite

F4-TCNQ concentration dependence of the current—voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode

Chinese Physics B, Vol. 23, Iss. 11, 2014-11 ,pp. : 117306-117316

IOP Publishing

Access to resources Recommend Favorite

Performance enhancement of pentacene and F16CuPc-based low-voltage devices using cross-linked blend gate dielectrics

Journal of Physics D: Applied Physics, Vol. 48, Iss. 4, 2015-02 ,pp. : 45105-45113

IOP Publishing

Access to resources Recommend Favorite

Study of electronic and magnetic properties in 4f electron based cubic EuAlO₃: a first-principles calculation

By Rai D P Shankar A Ghimire M P Khenata R Thapa R K Rai D P

Physica Scripta, Vol. 90, Iss. 6, 2015-06 ,pp. : 65803-65810

IOP Publishing

Access to resources Recommend Favorite

Low-frequency photodielectric phenomena in polycrystalline Pb₃O₄ layers

By Avanesyan V. Baranova E.

Technical Physics Letters, Vol. 33, Iss. 5, 2007-05 ,pp. : 428-429

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite