Related content

The effect of compositional disorder on electronic band structure in Ga_xIn_{1 - x}As_ySb_{1 - y}alloys lattice matched to GaSb

By Bouarissa N.  

Superlattices and Microstructures, Vol. 26, Iss. 4, 1999-10 ,pp. : 279-287

Academic Press

Access to resources Recommend Favorite

X-ray spectra and electronic band structure of nitrogen in Al _x Ga_1−x N solid solid solutions

By Ilyasov V.   Zhdanova T.   Nikiforov I.  

Physics of the Solid State, Vol. 49, Iss. 8, 2007-08 ,pp. : 1435-1439

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

A theoretical investigation of the band alignment of type-I direct band gap dilute nitride phosphide alloy of GaN_xAs_yP_1–x–y/GaP quantum wells on GaP substrates

By Ünsal Ö L   Gönül B   Temiz M  

Chinese Physics B, Vol. 23, Iss. 7, 2014-07 ,pp. : 77104-77108

IOP Publishing

Access to resources Recommend Favorite

Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance

By Xi-Ren Chen   Yu-Xin Song   Liang-Qing Zhu   Zhen Qi   Liang Zhu   Fang-Xing Zha   Shao-Ling Guo   Shu-Min Wang   Jun Shao  

Chinese Physics Letters, Vol. 32, Iss. 6, 2015-06 ,pp. : 67301-67304

IOP Publishing

Access to resources Recommend Favorite

Epitaxie en phase vapeur par pyrolyse d'organométalliques (EPVOM) des solutions solides ternaires Ga1-xAl xSb, Ga1-xInxSb et GaAsySb1-y sur substrats de GaSb

By  

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 8, 1987-08 ,pp. : 837-844

Edp Sciences

Access to resources Recommend Favorite