Bipolar resistance switching in the fully transparent BaSnO3-based memory device

Author： Ting Zhang   Jiang Yin   Gao-Feng Zhao   Wei-Feng Zhang   Yi-Dong Xia   Zhi-Guo Liu  

Publisher： IOP Publishing

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.8, 2014-08, pp. : 87304-87309

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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