Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials

Author： Jiang L   Gallagher J D   Senaratne C L   Aoki T   Mathews J   Kouvetakis J   Menéndez J  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.11, 2014-11, pp. : 115028-115041

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