Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3

ISSN： 1468-6996

Source： Science and Technology of Advanced Materials, Vol.13, Iss.4, 2012-08, pp. : 74-81

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Properties of Al-doped ZnO thin films grown by pulsed laser deposition on Si(100) substrates

By Kermiche Fouad

International Journal of Nanoparticles, Vol. 6, Iss. 2-3, 2013-06 ,pp. : 93-102

Inderscience Publishers

Access to resources Recommend Favorite

Characteristics of post-annealed SrTiO3 thin films prepared by mirror-confinement-type ECR plasma sputtering

Science and Technology of Advanced Materials, Vol. 1, Iss. 4, 2000-12 ,pp. : 21-27

IOP Publishing

Access to resources Recommend Favorite

Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects

Science and Technology of Advanced Materials, Vol. 14, Iss. 5, 2013-10 ,pp. : 77-85

IOP Publishing

Access to resources Recommend Favorite

Origin of photoluminescence peaks in Ge–SiO2 thin films

Science and Technology of Advanced Materials, Vol. 3, Iss. 3, 2002-06 ,pp. : 18-21

IOP Publishing

Access to resources Recommend Favorite

Formation of a-C thin films by plasma-based ion implantation

Science and Technology of Advanced Materials, Vol. 2, Iss. 3-4, 2001-09 ,pp. : 98-104

IOP Publishing

Access to resources Recommend Favorite