GaN/AlGaN intersubband optoelectronic devices

By  

New Journal of Physics, Vol. 11, Iss. 12, 2009-12 ,pp. : 779-794

IOP Publishing

Access to resources Recommend Favorite

High-Power GaN Electronic Devices

By Zhang A.P.   Ren F.   Anderson T.J.   Abernathy C.R.   Singh R.K.   Holloway P.H.   Pearton S.J.   Palmer D.   McGuire G.E.  

Critical Reviews in Solid State and Material Sciences, Vol. 27, Iss. 1, 2001-01 ,pp. : 1-71

Taylor & Francis Ltd

Access to resources Recommend Favorite

Advanced Processing of GaN for Electronic Devices

By Cao X. A.   Pearton S. J.   Ren F.  

Critical Reviews in Solid State and Material Sciences, Vol. 25, Iss. 4, 2000-10 ,pp. : 279-390

Taylor & Francis Ltd

Access to resources Recommend Favorite

AlGaN/GaN HEMTs grown by ammonia MBE

By Volkov V.   Ivanova V.   Kuz’michev Yu.   Lermontov S.   Solov’ev Yu.   Baranov D.   Kaidash A.   Krasovitskii D.   Pavlenko M.   Petrov S.   Pogorel’skii Yu.   Sokolov I.   Sokolov M.   Stepanov M.   Chalyi V.  

Technical Physics Letters, Vol. 30, Iss. 5, 2004-05 ,pp. : 380-382

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

AlGaN/GaN heterostructures for hot electron and quantum effects

By  

Journal of Physics: Conference Series , Vol. 152, Iss. 1, 2009-03 ,pp. : 45-51

IOP Publishing

Access to resources Recommend Favorite