Model for hydrogen-induced Sb atoms reconstruction √3 × √3 → 2 × 1 on Si(111)

Publisher： IOP Publishing

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.100, Iss.7, 2008-03, pp. : 151-154

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Carbon induced (3x3)R30 o reconstruction on Si(111) surface: a theoretical study

By Peng X.   Ye L.   Wang X.  

Surface Science, Vol. 548, Iss. 1, 2004-01 ,pp. : 51-58

Elsevier

Access to resources Recommend Favorite

Increase in the density of β-FeSi2 nanoclusters on a Si(111) surface by means of Si(111) √3 × √3R30°-B reconstruction

By Ivanchenko M.   Borisenko E.   Kotlyar V.   Utas O.   Ustinov V.   Lifshits V.  

Technical Physics Letters, Vol. 32, Iss. 5, 2006-05 ,pp. : 396-398

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Hydrogen-induced semimetal-semiconductor transition of two-dimensional ErSi2 detected by electron energy loss spectroscopy

By Angot T.   Koulmann J. J.   Gewinner G.  

EPL (EUROPHYSICS LETTERS), Vol. 35, Iss. 3, 2010-03 ,pp. : 215-220

Edp Sciences

Access to resources Recommend Favorite

AC plasma induced modifications in Sb2S3 thin films

By  

Journal of Physics: Conference Series , Vol. 207, Iss. 1, 2010-01 ,pp. : 131-134

IOP Publishing

Access to resources Recommend Favorite

Pressure-induced electronic topological transition in Sb2S3

By Sorb Y A   Rajaji V   Malavi P S   Subbarao U   Halappa P   Peter S C   Karmakar S   Narayana C  

Journal of Physics: Condensed Matter, Vol. 28, Iss. 1, 2016-01 ,pp. : 15602-15608

IOP Publishing

Access to resources Recommend Favorite