Heterogeneous integration of InAs on W/GaAs by MOVPE

Publisher： IOP Publishing

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.100, Iss.4, 2008-03, pp. : 178-181

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Superstructure Ga4InAs5

By Vaipolin A.   Sinitsyn M.   Yakovenko A.  

Physics of the Solid State, Vol. 43, Iss. 4, 2001-04 ,pp. : 616-620

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

MOVPE of structures with aluminum nanocluster layers in a GaAs matrix

By Vostokov N.   Danil’tsev V.   Drozdov Yu.   Pryakhin D.   Shashkin V.   Shuleshova I.  

Technical Physics Letters, Vol. 33, Iss. 5, 2007-05 ,pp. : 444-446

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Residual impurities in MO-VPE GaAs epitaxial layers

By  

Revue de Physique Appliquée (Paris), Vol. 19, Iss. 1, 1984-01 ,pp. : 7-15

Edp Sciences

Access to resources Recommend Favorite

GaInN/GaN heterostructures grown in production scale MOVPE reactors

By  

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-1035-Pr8-1039

Edp Sciences

Access to resources Recommend Favorite

Characterization of GaN films grown on GaAs by AP-MOVPE

By  

Journal of Physics: Conference Series , Vol. 167, Iss. 1, 2009-05 ,pp. : 241-245

IOP Publishing

Access to resources Recommend Favorite