Calculation of band bending in ferroelectric semiconductor

Publisher： IOP Publishing

ISSN： 1367-2630

Source： New Journal of Physics, Vol.2, Iss.1, 2000-04, pp. : 54-64

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

COMMENT ON "FIELD PENETRATION AND BAND BENDING NEAR SEMICONDUCTOR SURFACES IN HIGH ELECTRIC FIELD" BY T.T. TSONG

By  

Le Journal de Physique Colloques, Vol. 50, Iss. C8, 1989-11 ,pp. : C8-37-C8-40

Edp Sciences

Access to resources Recommend Favorite

Peculiarities of the bending-stiffness calculation for nanocrystals

By Ivanova E.   Krivtsov A.   Morozov N.  

Doklady Physics, Vol. 47, Iss. 8, 2002-08 ,pp. : 620-622

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

BAND STRUCTURE ENGINEERING OF SEMICONDUCTOR LASERS

By  

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-275-C5-276

Edp Sciences

Access to resources Recommend Favorite

The effect of optical radiation on the semiconductor conductivity in a thin-film ferroelectric-semiconductor structure

By Afanas’ev V.   Bulat D.   Kaptelov E.   Pronin I.  

Technical Physics Letters, Vol. 30, Iss. 6, 2004-06 ,pp. : 518-521

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Investigation of Ultrasonic and Acoustoelectric Properties of Ferroelectric-Semiconductor Crystals

By Samulionis V.  

Ferroelectrics, Vol. 336, Iss. 1, 2006-01 ,pp. : 29-38

Taylor & Francis Ltd

Access to resources Recommend Favorite