Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

By Yablonskiy A.   Baidakova N.   Novikov A.   Lobanov D.  

Semiconductors, Vol. 47, Iss. 11, 2013-11 ,pp. : 1496-1499

MAIK Nauka/Interperiodica

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Photoluminescence of Si/Ge nanostructures grown by molecular-beam epitaxy at low temperatures

By Burbaev T.   Kurbatov V.   Pogosov A.   Rzaev M.   Sibel’din N.   Tsvetkov V.  

Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 71-73

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Equivalent Trap Energy Level Extraction for SiGe Using Gate-Induced-Drain-Leakage Current Analysis

By Chang Liu   Wen-Jie Yu   Bo Zhang   Zhong-Ying Xue   Wang-Ran Wu   Yi Zhao   Qing-Tai Zhao  

Chinese Physics Letters, Vol. 31, Iss. 10, 2014-10 ,pp. : 106103-106105

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Influence of the germanium deposition rate on the growth and Photoluminescence of Ge(Si)/Si(001) self-assembled islands

By Vostokov N.   Krasil’nik Z.   Lobanov D.   Novikov A.   Shaleev M.   Yablonsky A.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 38-41

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Inverted Ge islands in {111} faceted Si pits—a novel approach towards SiGe islands with higher aspect ratio

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New Journal of Physics, Vol. 12, Iss. 6, 2010-06 ,pp. : 30-37

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