Publisher: IOP Publishing
ISSN: 1367-2630
Source: New Journal of Physics, Vol.15, Iss.9, 2013-09, pp. : 450-462
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Photoresponse study of visible blind GaN/AlGaN p-i-n ultraviolet photodetector
By Wang X.
Optical and Quantum Electronics, Vol. 42, Iss. 11-13, 2011-10 ,pp. :
INJECTION LUMINESCENCE IN AMORPHOUS SILICON p
Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. :
Development of defects introduced by neutronirradiation of a silicon p-i-n junction.
Journal de Physique, Vol. 24, Iss. 7, 1963-07 ,pp. :
Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics
By Rao Sandro Pangallo Giovanni Della Corte Francesco Giuseppe
Sensors, Vol. 16, Iss. 1, 2016-01 ,pp. :
Spectral sensitivity characteristics simulation for silicon p-i-n photodiode
Journal of Physics: Conference Series , Vol. 643, Iss. 1, 2015-11 ,pp. :