Field-effect-transistor characteristics of solvate C60 fullerene nanowhiskers

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.159, Iss.1, 2009-04, pp. : 24-28

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Synthesis and growth investigation of C60 fullerene nanowhiskers

Journal of Physics: Conference Series , Vol. 159, Iss. 1, 2009-04 ,pp. : 125-128

IOP Publishing

Access to resources Recommend Favorite

Adsorption characteristics of heat-treated fullerene nano-whiskers

Journal of Physics: Conference Series , Vol. 159, Iss. 1, 2009-04 ,pp. : 81-86

IOP Publishing

Access to resources Recommend Favorite

Quasicrystal of fullerene C60?

Journal de Physique I, Vol. 2, Iss. 1, 1992-01 ,pp. : 1-5

Edp Sciences

Access to resources Recommend Favorite

Effect of bismuth nanolayers on the oriented growth of fullerene C₆₀ on an amorphous substrate

By Pukha V. Varganov V. Mikhailov I. Drozdov A.

Physics of the Solid State, Vol. 46, Iss. 8, 2004-08 ,pp. : 1574-1576

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Off center effect on the photoabsorption spectrum of the Xe@C60 endohedral fullerene

Journal of Physics: Conference Series , Vol. 488, Iss. 2, 2014-04 ,pp. : 1-1

IOP Publishing

Access to resources Recommend Favorite