GaInN/GaN heterostructures grown in production scale MOVPE reactors

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Edp Sciences

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Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers

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Journal of Physics: Conference Series , Vol. 209, Iss. 1, 2010-02 ,pp. : 128-131

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Fabrication and characterization of strained InGaAs quantum wires grown on high index V-grooved GaAs substrates by LP-MOVPE

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Thermal Properties of GaN Films Grown on Si Substrates

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Photoluminescence and Raman studies of GaN films grown by MOCVD

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