Magnetoresistance oscillation at charge neutrality point in monolayer graphene due to potential fluctuation

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.232, Iss.1, 2010-06, pp. : 69-73

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

High-field magneto-transport at charge neutrality point in monolayer graphene

Journal of Physics: Conference Series , Vol. 334, Iss. 1, 2011-12 ,pp. : 214-218

IOP Publishing

Access to resources Recommend Favorite

Perfect charge compensation in WTe₂ for the extraordinary magnetoresistance: From bulk to monolayer

By Lv H. Y. Lu W. J. Shao D. F. Liu Y. Tan S. G. Sun Y. P.

EPL (EUROPHYSICS LETTERS), Vol. 110, Iss. 3, 2015-05 ,pp. : 37004-37004

Edp Sciences

Access to resources Recommend Favorite

On charge transfer in the adsorbed molecules-graphene monolayer-SiC substrate system

By Davydov S.

Semiconductors, Vol. 45, Iss. 5, 2011-05 ,pp. : 618-622

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Spatial mapping of potential fluctuation in GaAs/AlGaAs and graphene by a scanning nanoelectrometer

Journal of Physics: Conference Series , Vol. 334, Iss. 1, 2011-12 ,pp. : 129-133

IOP Publishing

Access to resources Recommend Favorite

Nanoindentation Models of Monolayer Graphene and Graphyne under Point Load Pattern Studied by Molecular Dynamics

By LangXiang JianWu Shuang-YingMa FangWang Kai-WangZhang

Chinese Physics Letters, Vol. 32, Iss. 9, 2015-09 ,pp. : 96801-96804

IOP Publishing

Access to resources Recommend Favorite