![Open access](/images/ico/o.png)
![](/images/ico/ico5.png)
Publisher: IOP Publishing
ISSN: 1742-6596
Source: Journal of Physics: Conference Series , Vol.265, Iss.1, 2011-01, pp. : 3-14
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
An open-shell method for neutral vacancy in silicon and diamond
By Moliver S.
Physics of the Solid State, Vol. 42, Iss. 4, 2000-04 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Electronic structure of neutral silicon-vacancy complex in diamond
By Moliver S.
Technical Physics, Vol. 48, Iss. 11, 2003-11 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
ULTRASONIC DETECTION OF THE VACANCY IN BORON-DOPED SILICON
Le Journal de Physique Colloques, Vol. 46, Iss. C10, 1985-12 ,pp. :
![](/images/ico/o.png)
![](/images/ico/ico5.png)
Cluster model calculations for charge states of a silicon vacancy
Journal of Physics: Conference Series , Vol. 150, Iss. 4, 2009-03 ,pp. :