Publisher: IOP Publishing
ISSN: 1742-6596
Source: Journal of Physics: Conference Series , Vol.225, Iss.1, 2010-04, pp. : 334-337
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Vacancy-type defects created by single-shot and chain ion implantation of silicon
New Journal of Physics, Vol. 14, Iss. 2, 2012-02 ,pp. :
Adsorption on graphene with vacancy-type defects: A model approach
Physics of the Solid State, Vol. 55, Iss. 6, 2013-06 ,pp. :
Annealing of defects in Fe after MeV heavy-ion irradiation
EPL (EUROPHYSICS LETTERS), Vol. 44, Iss. 4, 2010-03 ,pp. :