Mechanism of structural changes of Si(111) surfaces subjected to low-energy ion pulses during molecular-beam epitaxy

By Dvurechenskii A.   Zinov’ev V.   Markov V.  

Journal of Experimental and Theoretical Physics, Vol. 87, Iss. 6, 1998-12 ,pp. : 1116-1121

MAIK Nauka/Interperiodica

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Photoluminescence of Si/Ge nanostructures grown by molecular-beam epitaxy at low temperatures

By Burbaev T.   Kurbatov V.   Pogosov A.   Rzaev M.   Sibel’din N.   Tsvetkov V.  

Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 71-73

MAIK Nauka/Interperiodica

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Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

By Drozdov M.   Novikov A.   Yurasov D.  

Semiconductors, Vol. 47, Iss. 11, 2013-11 ,pp. : 1481-1484

MAIK Nauka/Interperiodica

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Study of the component distribution in Si/Ge_xSi_1−x /Si heterostructures grown by molecular beam epitaxy

By Kesler V.   Logvinskii L.   Mashanov V.   Pchelyakov O.   Ul’yanov V.  

Physics of the Solid State, Vol. 44, Iss. 4, 2002-04 ,pp. : 709-713

MAIK Nauka/Interperiodica

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Growing nanocrystalline silicon on sapphire by molecular beam epitaxy

By Pavlov D.   Shilyaev P.   Korotkov E.   Krivulin N.  

Technical Physics Letters, Vol. 36, Iss. 6, 2010-06 ,pp. : 548-550

MAIK Nauka/Interperiodica

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