Neutralization of positively charged excitonic state in single InAs quantum dot by Si delta doping

Publisher： IOP Publishing

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.245, Iss.1, 2010-09, pp. : 356-359

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Measurements of a fast nuclear-spin dynamics in a single InAs quantum dot with positively charged exciton

By Dou X. M.   Sun B. Q.   Jiang D. S.   Ni H. Q.   Niu Z. C.  

EPL (EUROPHYSICS LETTERS), Vol. 98, Iss. 1, 2012-04 ,pp. : 17007-17007

Edp Sciences

Access to resources Recommend Favorite

Ferromagnetism and magnetotransport in GaAs structures with InAs quantum dot layer or InxGa1-xAs quantum well delta-doped with Mn and C

By  

Journal of Physics: Conference Series , Vol. 100, Iss. 4, 2008-03 ,pp. : 103-106

IOP Publishing

Access to resources Recommend Favorite

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

By  

Chinese Physics B, Vol. 24, Iss. 2, 2015-02 ,pp. : 28101-28104

IOP Publishing

Access to resources Recommend Favorite

InAs quantum dot field effect transistors

By Yusa G.   Sakaki H.  

Superlattices and Microstructures, Vol. 25, Iss. 1, 1999-01 ,pp. : 247-250

Academic Press

Access to resources Recommend Favorite

Effect of inter-dot distance on excitonic dephasing in quantum dot chains

By  

Journal of Physics: Conference Series , Vol. 210, Iss. 1, 2010-02 ,pp. : 281-284

IOP Publishing

Access to resources Recommend Favorite