Identification of dislocation-related luminescence participating levels in silicon by DLTS and Pulsed-CL profiling

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.281, Iss.1, 2011-02, pp. : 56-62

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Giant Poole-Frenkel effect for the shallow dislocation-related hole traps in silicon

Journal of Physics: Conference Series , Vol. 281, Iss. 1, 2011-02 ,pp. : 63-72

IOP Publishing

Access to resources Recommend Favorite

Oxygen-induced modification of dislocation luminescence centers in silicon

By Steinman E.

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 5-8

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

EBIC AND DLTS MEASUREMENTS OF SI-AND POLYCRYSTALLINE SILICON

Le Journal de Physique Colloques, Vol. 49, Iss. C5, 1988-10 ,pp. : C5-665-C5-670

Edp Sciences

Access to resources Recommend Favorite

Resonant dislocation motion in NaCl crystals in the EPR scheme in the Earth’s magnetic field with pulsed pumping

By Alshits V. Darinskaya E. Morozov V. Kats V. Lukin A.

Physics of the Solid State, Vol. 55, Iss. 11, 2013-11 ,pp. : 2289-2296

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

The dislocation anharmonicity in silicon

By Skvortsov A. Orlov A. Nikitin K. Litvinenko O.

Technical Physics Letters, Vol. 26, Iss. 11, 2000-11 ,pp. : 974-976

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite