Influence of the gas flow of Argon and the distance between substrate and plasma on properties of Al-doped zinc oxide films
Publisher: IOP Publishing
ISSN: 1742-6596
Source: Journal of Physics: Conference Series , Vol.152, Iss.1, 2009-03, pp. : 174-180
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel
Chinese Physics Letters, Vol. 32, Iss. 2, 2015-02 ,pp. :