Silicon MOSFETs as room temperature terahertz detectors

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.193, Iss.1, 2009-11, pp. : 382-385

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Study of saturation velocity overshoot in deep submicron silicon MOSFETS from liquid helium up to room temperature

Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. : C6-19-C6-24

Edp Sciences

Access to resources Recommend Favorite

Temperature scaling of nanoscale silicon MOSFETs

Le Journal de Physique IV, Vol. 12, Iss. 3, 2002-05 ,pp. : 19-22

Edp Sciences

Access to resources Recommend Favorite

Plasma anodization of silicon at room temperature

Revue de Physique Appliquée (Paris), Vol. 16, Iss. 8, 1981-08 ,pp. : 419-424

Edp Sciences

Access to resources Recommend Favorite

Reverse short channel effect in silicon MOSFETs operated at low temperature

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-9-Pr3-12

Edp Sciences

Access to resources Recommend Favorite

Terahertz Reflection Gratings Made by Room-Temperature High-Pressure Molding

By Busch Stefan Born Norman Koch Martin Fischer Bernd

Journal of Infrared, Millimeter, and Terahertz Waves, Vol. 34, Iss. 7-8, 2013-08 ,pp. : 413-415

Springer Publishing Company

Access to resources Recommend Favorite