Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

Author： Ming-Gang Liu   Yun-Qian Wang   Yi-Bin Yang   Xiu-Qi Lin   Peng Xiang   Wei-Jie Chen   Xiao-Biao Han   Wen-Jie Zang   Qiang Liao   Jia-Li Lin   Hui Luo   Zhi-Sheng Wu   Yang Liu   Bai-Jun Zhang  

Publisher： IOP Publishing

E-ISSN： 1741-4199|24|3|38503-38508

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.3, 2015-03, pp. : 38503-38508

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer

By Xiao-Peng Yu   Guang-Han Fan   Bin-Bin Ding   Jian-Yong Xiong   Yao Xiao   Tao Zhang   Shu-Wen Zheng  

Chinese Physics B, Vol. 23, Iss. 2, 2014-02 ,pp. : 28502-28505

IOP Publishing

Access to resources Recommend Favorite

Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers

By Jin-Xin Cai   Hui-Qing Sun   Huan Zheng   Pan-Jun Zhang   Zhi-You Guo  

Chinese Physics B, Vol. 23, Iss. 5, 2014-05 ,pp. : 58502-58505

IOP Publishing

Access to resources Recommend Favorite

Analysis of light extraction efficiency of GaN-based light-emitting diodes

By  

Journal of Physics: Conference Series , Vol. 276, Iss. 1, 2011-02 ,pp. : 529-533

IOP Publishing

Access to resources Recommend Favorite

Electron leakage effects on GaN-based light-emitting diodes

By Piprek Joachim   Li Simon  

Optical and Quantum Electronics, Vol. 42, Iss. 2, 2010-01 ,pp. : 89-95

Springer Publishing Company

Access to resources Recommend Favorite

Optimizing interdigitated contact scheme of GaN-based light-emitting diodes

By  

Journal of Physics: Conference Series , Vol. 276, Iss. 1, 2011-02 ,pp. : 1007-1012

IOP Publishing

Access to resources Recommend Favorite