Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy

E-ISSN： 1361-6463|48|7|75303-75308

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.7, 2015-02, pp. : 75303-75308

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