On the properties of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide

By Dzhibuti Z.   Dolidze N.  

Technical Physics Letters, Vol. 27, Iss. 12, 2001-12 ,pp. : 1008-1009

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

On the possible spatial orientation of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide

By Dzhibuti Z.   Dolidze N.  

Technical Physics Letters, Vol. 26, Iss. 9, 2000-09 ,pp. : 789-790

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Multi-center interference effect on (e, 2e) electron momentum spectroscopy

By  

Journal of Physics: Conference Series , Vol. 635, Iss. 7, 2015-09 ,pp. : 37-37

IOP Publishing

Access to resources Recommend Favorite

Sources of 1/F noise in gallium arsenide IMPATT diodes

By Kornilov S.   Ovchinnikov K.   Kislitsyn É.  

Technical Physics, Vol. 42, Iss. 8, 1997-08 ,pp. : 913-918

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Porous gallium arsenide with arsenic clusters

By Buzynin Yu.   Gusev S.   Drozdov Yu.   Murel A.  

Technical Physics, Vol. 45, Iss. 5, 2000-05 ,pp. : 650-652

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite