Hydrogen plasma-mediated modification of the electrical transport properties of ZnO nanowire field effect transistors

E-ISSN： 1361-6528|26|12|125202-125209

ISSN： 0957-4484

Source： Nanotechnology, Vol.26, Iss.12, 2015-03, pp. : 125202-125209

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization

Nanotechnology, Vol. 26, Iss. 9, 2015-03 ,pp. : 95202-95207

IOP Publishing

Access to resources Recommend Favorite

Microstructure change of ZnO nanowire induced by energetic x-ray radiation and its effect on the field emission properties

By Zhao C X Li Y F Chen Y C Wu J Q Wang B Yi F T Deng S Z Xu N S Chen Jun

Nanotechnology, Vol. 24, Iss. 27, 2013-07 ,pp. : 275703-275711

IOP Publishing

Access to resources Recommend Favorite

Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires

By OpokuCharles Abhishek Singh Dahiya OshmanChristopher DaumontChristophe CayrelFrederic Poulin-VittrantGuylaine AlquierDaniel CamaraNicolas

Nanotechnology, Vol. 26, Iss. 35, 2015-09 ,pp. : 355704-355713

IOP Publishing

Access to resources Recommend Favorite

Electrical properties of ZnO single nanowires

By Stiller Markus Barzola-Quiquia José Zoraghi Mahsa Esquinazi Pablo

Nanotechnology, Vol. 26, Iss. 39, 2015-10 ,pp. : 395703-395711

IOP Publishing

Access to resources Recommend Favorite

Influence of ZnO nanowire array morphology on field emission characteristics

By Garry S McCarthy É Mosnier J-P McGlynn E

Nanotechnology, Vol. 25, Iss. 13, 2014-04 ,pp. : 135604-135610

IOP Publishing

Access to resources Recommend Favorite