Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

Author： Musolino M Tahraoui A Fernández-Garrido S Brandt O Trampert A Geelhaar L Riechert H

Publisher： IOP Publishing

E-ISSN： 1361-6528|26|8|85605-85612

ISSN： 0957-4484

Source： Nanotechnology, Vol.26, Iss.8, 2015-02, pp. : 85605-85612

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