Twinning in GaAs nanowires on patterned GaAs(111)B

E-ISSN： 1521-4079|50|1|62-68

ISSN： 0232-1300

Source： CRYSTAL RESEARCH AND TECHNOLOGY (ELECTRONIC), Vol.50, Iss.1, 2015-01, pp. : 62-68

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Structural stability of clean GaAs nanowires grown along the [111] direction

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 7, Iss. 2, 2010-02 ,pp. : 374-377

John Wiley & Sons Inc

Access to resources Recommend Favorite

Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs

By Rojas T.C. Molina S.I. Sacedon A. Valtuena F. Calleja E. Garca R.

Thin Solid Films, Vol. 317, Iss. 1, 1998-04 ,pp. : 270-273

Elsevier

Access to resources Recommend Favorite

Piezoelectric Current Generation in Wurtzite GaAs Nanowires

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 12, Iss. 1, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Site‐controlled growth of GaAs nanoislands on pre‐patterned silicon substrates

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 2, 2015-02 ,pp. : 443-448

John Wiley & Sons Inc

Access to resources Recommend Favorite

Structure of twins in GaAs nanowires grown by the vapourâ-“liquidâ-“solid process

By Banerjee R.

Philosophical Magazine Letters, Vol. 86, Iss. 12, 2006-12 ,pp. : 807-816

Taylor & Francis Ltd

Access to resources Recommend Favorite