High‐Responsivity Graphene/InAs Nanowire Heterojunction Near‐Infrared Photodetectors with Distinct Photocurrent On/Off Ratios

Publisher： John Wiley & Sons Inc

E-ISSN： 1613-6829|11|8|936-942

ISSN： 1613-6810

Source： SMALL, Vol.11, Iss.8, 2015-02, pp. : 936-942

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Photodetectors: High‐Responsivity Graphene/InAs Nanowire Heterojunction Near‐Infrared Photodetectors with Distinct Photocurrent On/Off Ratios (Small 8/2015)

By  

SMALL, Vol. 11, Iss. 8, 2015-02 ,pp. : 890-890

John Wiley & Sons Inc

Access to resources Recommend Favorite

MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High‐Detectivity, Self‐Driven Visible–Near Infrared Photodetectors

By  

ADVANCED FUNCTIONAL MATERIALS, Vol. 25, Iss. 19, 2015-05 ,pp. : 2910-2919

John Wiley & Sons Inc

Access to resources Recommend Favorite

A Graphene‐Based Vacuum Transistor with a High ON/OFF Current Ratio

By  

ADVANCED FUNCTIONAL MATERIALS, Vol. 25, Iss. 37, 2015-10 ,pp. : 5972-5978

John Wiley & Sons Inc

Access to resources Recommend Favorite

A Graphene‐Based Vacuum Transistor with a High ON/OFF Current Ratio

By  

ADVANCED FUNCTIONAL MATERIALS, Vol. 1616-301X, Iss. 37, 2015-10 ,pp. : 5972-5978

John Wiley & Sons Inc

Access to resources Recommend Favorite

Temperature dependence of responsivity in quantum dot infrared photodetectors

By Schacham S.E.   Bahir G.   Finkman E.   Julien F.H.   Brault J.   Gendry M.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 636-637

Elsevier

Access to resources Recommend Favorite