Influence of grain boundaries intentionally induced between seed plates on the defect generation in quasi‐mono‐crystalline silicon ingots

Publisher： John Wiley & Sons Inc

E-ISSN： 1521-4079|50|1|124-132

ISSN： 0232-1300

Source： CRYSTAL RESEARCH AND TECHNOLOGY (ELECTRONIC), Vol.50, Iss.1, 2015-01, pp. : 124-132

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