Correlation between the residual stress in 3C-SiC/Si epifilm and the quality of epitaxial graphene formed thereon

Publisher： IOP Publishing

E-ISSN： 1757-899X|79|1|29-35

ISSN： 1757-899X

Source： IOP Conference Series: Materials Science and Engineering, Vol.79, Iss.1, 2015-06, pp. : 29-35

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