On Approach to Increase Integration Rate of Field-Effect Transistors by Using Inhomogeneity of Heterostructure and Optimization of Technological Process

Publisher： Bentham Science Publishers

E-ISSN： 1876-4037|6|3|168-177

ISSN： 1876-4029

Source： Micro and Nanosystems, Vol.6, Iss.3, 2014-08, pp. : 168-177

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