Raman shift and electrical properties of MoS₂ bilayer on boron nitride substrate

Author： Li Lijun Lee Inyeal Lim Dongsuk Kang Moonshik Kim Gil-Ho Aoki Nobuyuki Ochiai Yuichi Watanabe Kenji Taniguchi Takashi

Publisher： IOP Publishing

E-ISSN： 1361-6528|26|29|295702-295707

ISSN： 0957-4484

Source： Nanotechnology, Vol.26, Iss.29, 2015-07, pp. : 295702-295707

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Thermal transport properties of MoS₂ and MoSe₂ monolayers

By Kandemir Ali Yapicioglu Haluk Kinaci Alper Çağın Tahir Sevik Cem

Nanotechnology, Vol. 27, Iss. 5, 2016-02 ,pp. : 55703-55709

IOP Publishing

Access to resources Recommend Favorite

Synthesis and tribological properties of MoS₂ composite nanoparticles with different morphologies

By Hu K H Cai Y K Hu X G Xu Y F

Surface Engineering, Vol. 27, Iss. 7, 2011-08 ,pp. : 544-550

Maney Publishing

Access to resources Recommend Favorite

Molecular dynamics simulations of mechanical properties of monolayer MoS₂

By Xiong Si Cao Guoxin

Nanotechnology, Vol. 26, Iss. 18, 2015-05 ,pp. : 185705-185714

IOP Publishing

Access to resources Recommend Favorite

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS₂ devices

By Sharma Deepak Amani Matin Motayed Abhishek Shah Pankaj B Birdwell A Glen Najmaei Sina Ajayan Pulickel M Lou Jun Dubey Madan Li Qiliang Davydov Albert V

Nanotechnology, Vol. 25, Iss. 15, 2014-04 ,pp. : 155702-155708

IOP Publishing

Access to resources Recommend Favorite

Fluorinated CYTOP passivation effects on the electrical reliability of multilayer MoS2 field-effect transistors

Nanotechnology, Vol. 26, Iss. 45, 2015-11 ,pp. : 455201-455207

IOP Publishing

Access to resources Recommend Favorite