Author： Yong Zhang Ye-Liang Wang Yan-De Que Hong-Jun Gao
Publisher： IOP Publishing
E-ISSN： 1741-4199|24|7|78104-78107
ISSN： 1674-1056
Source： Chinese Physics B, Vol.24, Iss.7, 2015-07, pp. : 78104-78107
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Abstract
An efficient method based on atomic force microscopy (AFM) has been developed to characterize silicon intercalated graphene grown on single crystalline Ir(111) thin films. By combining analyses of the phase image, force curves, and friction–force mapping, acquired by AFM, the locations and coverages of graphene and silicon oxide can be well distinguished. We can also demonstrate that silicon atoms have been successfully intercalated between graphene and the substrate. Our method gives an efficient and simple way to characterize graphene samples with interacted atoms and is very helpful for future applications of graphene-based devices in the modern microelectronic industry, where AFM is already widely used.
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