High performance trench MOS barrier Schottky diode with high-k gate oxide

Author： Dong-Yuan Zhai   Jun Zhu   Yi Zhao   Yin-Fei Cai   Yi Shi   You-Liao Zheng  

Publisher： IOP Publishing

E-ISSN： 1741-4199|24|7|77201-77203

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.7, 2015-07, pp. : 77201-77203

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

HIGH PERFORMANCE SCHOTTKY DIODE AND FET ON InP

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-217-C4-221

Edp Sciences

Access to resources Recommend Favorite

A TRENCH ISOLATED HIGH SPEED BIPOLAR PROCESS FOR A 10K GATE, 950MHz, VLSI CIRCUIT

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-105-C4-108

Edp Sciences

Access to resources Recommend Favorite

High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment

By Chao-Wen Liu   Jing-Ping Xu   Lu Liu   Han-Han Lu  

Chinese Physics B, Vol. 24, Iss. 12, 2015-12 ,pp. : 127304-127308

IOP Publishing

Access to resources Recommend Favorite

Impact of Native Defects in the High Dielectric Constant Oxide HfSiO4 on MOS Device Performance

By Hai-Kuan Dong   Li-Bin Shi  

Chinese Physics Letters, Vol. 33, Iss. 1, 2016-01 ,pp. : 16101-16104

IOP Publishing

Access to resources Recommend Favorite

Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high- k dielectric-filled extended trench

By Pei Wang   Xiao-Rong Luo   Yong-Heng Jiang   Qi Wang   Kun Zhou   Li-Juan Wu   Xiao-Wei Wang   Jin-Yong Cai   Yin-Chun Luo   Ye Fan   Xia-Rong Hu   Yuan-Hang Fan   Jie Wei   Bo Zhang  

Chinese Physics B, Vol. 22, Iss. 2, 2013-02 ,pp. : 27305-27310

IOP Publishing

Access to resources Recommend Favorite