Author: Hui-Qiang Guo Wei-Yue Tang Liang Liu Jian Wei Da-Lai Li Jia-Feng Feng Xiu-Feng Han
Publisher: IOP Publishing
E-ISSN: 1741-4199|24|7|78504-78507
ISSN: 1674-1056
Source: Chinese Physics B, Vol.24, Iss.7, 2015-07, pp. : 78504-78507
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Low resistance magnetic tunnel junctions with MgO wedge barrier
Journal of Physics: Conference Series , Vol. 200, Iss. 5, 2010-01 ,pp. :
Annealing effect on low frequency noise in MgO-based magnetic tunnel junctions
Journal of Physics: Conference Series , Vol. 303, Iss. 1, 2011-07 ,pp. :
Magnetic diode effect in double-barrier tunnel junctions
By Chshiev M. Stoeffler D. Vedyayev A. Ounadjela K.
EPL (EUROPHYSICS LETTERS), Vol. 58, Iss. 2, 2010-03 ,pp. :