Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer

By Hayashi Hiroaki   Konno Yuta   Kishino Katsumi  

Nanotechnology, Vol. 27, Iss. 5, 2016-02 ,pp. : 55302-55308

IOP Publishing

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Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

By Musolino M   Tahraoui A   Fernández-Garrido S   Brandt O   Trampert A   Geelhaar L   Riechert H  

Nanotechnology, Vol. 26, Iss. 8, 2015-02 ,pp. : 85605-85612

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Conditions for high yield of selective-area epitaxy InAs nanowires on SiOx/Si(111) substrates

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Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition

By Song Jie   Leung Benjamin   Zhang Yu   Han Jung  

Nanotechnology, Vol. 25, Iss. 22, 2014-06 ,pp. : 225602-225608

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Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns

By Kong X   Li H   Albert S   Bengoechea-Encabo A   Sanchez-Garcia M A   Calleja E   Draxl C   Trampert A  

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