Growth and characterization of quaternary (GaIn)(AsBi) layers for optoelectronic terahertz detector applications

Author: Pačebutas Vaidas   Urbanowicz Andrzej   Cicėnas Paulius   Stanionytė Sandra   Bičiūnas Andrius   Nevinskas Ignas   Krotkus Arūnas  

Publisher: IOP Publishing

E-ISSN: 1361-6641|30|9|94012-94017

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.30, Iss.9, 2015-09, pp. : 94012-94017

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract