Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures

Author： Sirkeli Vadim P   Yilmazoglu Oktay   Küppers Franko   Hartnagel Hans L  

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|6|65005-65023

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.6, 2015-06, pp. : 65005-65023

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