Threshold current reduction for the metal–insulator transition in NbO2−x-selector devices: the effect of ReRAM integration

Author: Liu Xinjun   Liu Xinjun   Liu Xinjun   Liu Xinjun  

Publisher: IOP Publishing

E-ISSN: 1361-6463|48|19|195105-195112

ISSN: 0022-3727

Source: Journal of Physics D: Applied Physics, Vol.48, Iss.19, 2015-03, pp. : 195105-195112

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Abstract