Design of an Electrically Written and Optically Read Non-volatile Memory Device Employing BiFeO₃/Au Heterostructures with Strong Absorption Resonance

Author： Peng-Bo Xiao Wei Zhang Tian-Liang Qu Yun Huang Shao-Min Hu

Publisher： IOP Publishing

E-ISSN： 1741-3540|32|7|74204-74207

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.7, 2015-07, pp. : 74204-74207

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