Structural, electronic, and magnetic properties of perpendicularly magnetised Mn₂RhSn thin films

Author： Meshcheriakova Olga Köhler Albrecht Ouardi Siham Kondo Yukio Kubota Takahide Chandra Shekhar Karel Julie Barbosa Carlos V Stinshoff Rolf Sahoo Roshnee Ueda Shigenori Ikenaga Eiji Mizukami Shigemi Chadov Stanislav Ebke Daniel Fecher Gerhard H Felser Claudia

Publisher： IOP Publishing

E-ISSN： 1361-6463|48|16|164008-164015

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.16, 2015-04, pp. : 164008-164015

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Abstract

Epitaxial thin films of Mn₂RhSn were grown on a MgO(0 0 1) substrate by magnetron co-sputtering of the constituents. An optimised range of temperature for heat treatment was used to stabilise the tetragonal structure and to prevent the capping Rh layer from diffusing into the Heusler layer. Electronic and magnetic properties were analysed by hard x-ray photoelectron spectroscopy as well as field- and temperature-dependent Hall and resistivity measurements. The measured valence spectra are in good agreement with the calculated density of states. The measured saturation magnetisation corresponds to a magnetic moment of 1 μ_B in the primitive cell. The magnetisation measurements revealed an out-of-plane anisotropy energy of 89 kJ m⁻³ and a maximum energy product of 3.3 kJ m⁻³. The magnetoresistance ratio is 2% for fields of 9 T. The lattice parameter of the compound has a very small mismatch with MgO, which makes it promising for coherent electron tunnelling phenomena.