High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films

Author： Yuan Y Wang Y Gao K Khalid M Wu C Zhang W Munnik F Weschke E Baehtz C Skorupa W Helm M Zhou S

E-ISSN： 1361-6463|48|23|235002-235007

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.23, 2015-06, pp. : 235002-235007

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Abstract

We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In_1−xMn_xAs epilayer depends on the Mn concentration x, reaching 82 K for x = 0.105. The substitution of Mn ions at the indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of the electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.