Structure and transport properties of Ge quantum dots in a SiO2 matrix

Author： Slunjski R   Dubček P   Radić N   Bernstorff S   Pivac B  

Publisher： IOP Publishing

E-ISSN： 1361-6463|48|23|235301-235306

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.23, 2015-06, pp. : 235301-235306

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Quantum chemical modelling of the structure and properties of hypervalent defects in vitreous SiO2 and GeO2

By Zyubin A.   Dembovskii S.  

Physics of the Solid State, Vol. 41, Iss. 8, 1999-08 ,pp. : 1298-1302

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

STRUCTURE AND PROPERTIES OF TiO2-SiO2 AND TiO2-GeO2 GLASSES

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C9, 1982-12 ,pp. : C9-235-C9-238

Edp Sciences

Access to resources Recommend Favorite

Photoluminescence of germanium quantum dots grown in silicon on a SiO2 submonolayer

By Shamirzaev T.   Seksenbaev M.   Zhuravlev K.   Nikiforov A.   Ul’yanov V.   Pchelyakov O.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 82-85

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Influence of antimony on the morphology and properties of an array of Ge/Si(100) quantum dots

By Cirlin G.   Tonkikh A.   Ptitsyn V.   Dubrovskii V.   Masalov S.   Evtikhiev V.   Denisov D.   Ustinov V.   Werner P.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 58-62

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Elongated quantum dots of Ge on Si formation modelling

By  

Journal of Physics: Conference Series , Vol. 541, Iss. 1, 2014-10 ,pp. : 439-442

IOP Publishing

Access to resources Recommend Favorite