Morphology, interface polarity and branching of electrochemically etched pores in InP

E-ISSN： 1862-6319|202|15|2843-2843

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.202, Iss.15, 2005-12, pp. : 2843-2843

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Structure of the wafer fused InP (001)-GaAs (001) interface

By Sagalowicz L. Rudra A. Syrbu A. Behrend J.

Philosophical Magazine Letters, Vol. 76, Iss. 6, 1997-12 ,pp. : 445-452

Taylor & Francis Ltd

Access to resources Recommend Favorite

Structural and luminescence studies of stain-etched and electrochemically etched germanium

By Sendova-Vassileva M. Tzenov N. Dimova-Malinovska D. Rosenbauer M. Stutzmann M. Josepovits K.V.

Thin Solid Films, Vol. 255, Iss. 1, 1995-01 ,pp. : 282-285

Elsevier

Access to resources Recommend Favorite

Microstructure and photoluminescence of electrochemically etched porous SiC

By Jessensky O. Muller F. Gosele U.

Thin Solid Films, Vol. 297, Iss. 1, 1997-04 ,pp. : 224-228

Elsevier

Access to resources Recommend Favorite

Investigation of morphology evolution of the In‐rich inclusions and the corresponding defects in InP single crystals

CRYSTAL RESEARCH AND TECHNOLOGY (ELECTRONIC), Vol. 50, Iss. 8, 2015-08 ,pp. : 668-675

John Wiley & Sons Inc

Access to resources Recommend Favorite

Issue Information: Crystal Research and Technology 8'2015

CRYSTAL RESEARCH AND TECHNOLOGY (ELECTRONIC), Vol. 50, Iss. 8, 2015-08 ,pp. : NA-NA

John Wiley & Sons Inc

Access to resources Recommend Favorite