Infrared measurement and irradiation of ultra low carbon concentration silicon crystal

E-ISSN： 1610-1642|9|10‐11|1931-1936

ISSN： 1862-6351

Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.9, Iss.10‐11, 2012-10, pp. : 1931-1936

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation

By Crouch C.H. Carey J.E. Shen M. Mazur E. Génin F.Y.

Applied Physics A, Vol. 79, Iss. 7, 2004-11 ,pp. : 1635-1641

Springer Publishing Company

Access to resources Recommend Favorite

Low-Temperature Reactions between Vaporizing Silicon and Carbon

By Kharlamov A. I.

Theoretical and Experimental Chemistry, Vol. 39, Iss. 6, 2003-11 ,pp. : 374-379

Springer Publishing Company

Access to resources Recommend Favorite

Hierarchical nano/microstructures on silicon surface with ultra low reflectance for photovoltaic applications

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 9, Iss. 10‐11, 2012-10 ,pp. : 1873-1877

John Wiley & Sons Inc

Access to resources Recommend Favorite

Two-dimensional infrared photonic crystal based on macroporous silicon

By Gruning U. Lehmann V.

Thin Solid Films, Vol. 276, Iss. 1, 1996-04 ,pp. : 151-154

Elsevier

Access to resources Recommend Favorite

Extended vacancy-type defects in silicon induced at low temperatures by electron irradiation

By Yamasaki J. Ohno Y. Takeda S. Kimura Y.

Philosophical Magazine, Vol. 83, Iss. 2, 2003-01 ,pp. : 151-163

Taylor & Francis Ltd

Access to resources Recommend Favorite