Publisher： John Wiley & Sons Inc
E-ISSN： 1613-6829|1613-6810|37|4829-4836
ISSN： 1613-6810
Source： SMALL, Vol.1613-6810, Iss.37, 2015-10, pp. : 4829-4836
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Abstract
A remarkable performance enhancement of Gr/Si junction‐based self‐powered photodetectors is demonstrated via surface modification with a MoO3 thin film. The external quantum efficiency of the Gr/Si device is significantly enhanced up to ≈80% by almost four times in the visible light region, which can be attributed to the increased Schottky barrier height and the reduced series resistance of Gr/Si device after MoO3 modification.
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