Atomic Layer Deposition and Characterization of Dysprosium‐Doped Zirconium Oxide Thin Films

E-ISSN： 1521-3862|948-1907|7-8-9|181-187

ISSN： 0948-1907

Source： CHEMICAL VAPOR DEPOSITION (ELECTRONIC), Vol.948-1907, Iss.7-8-9, 2015-09, pp. : 181-187

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Abstract

Dy2O3 doped ZrO2 films are grown on silicon substrates using atomic layer deposition at 300 °C. Dy(thd)3 (thd = 2,2,6,6‐tetramethyl‐3,5‐heptanedionato) and ZrCl4 are used as metal precursors and H2O as the oxygen precursor. Despite the low growth rate of Dy2O3 in a beta‐diketonate/water process, the process allows deposition of thin films with the dysprosium content of few mass %. The films crystallize in the form of tetragonal zirconia already in as‐deposited state and grow conformally onto 3D substrates with an aspect ratio of 1:20. The capacitors formed on the basis of the films in as‐deposited and annealed states demonstrate current–voltage and capacitance behavior characteristic of those with high‐permittivity dielectrics. The maximum concentration of electronic defects at oxide/electrode interfaces reaches 1.8 × 1011 cm−2 eV−1.